简介：SiO_2thinfilmscontainingSi_(1-x)Ge_xquantumdots(QDs)arepreparedbyionimplantationandannealingtreatment.Thephotoluminescence(PL)andmicrostructuralpropertiesofthinfilmsareinvestigated.ThesamplesexhibitstrongPLinthewavelengthrangeof400—470nmandrelativelyweakPLpeaksat730and780nmatroomtemperature.Blueshiftisfoundforthe400-nmPLpeak,andtheintensityincreasesinitiallyandthendecreaseswiththeincreaseofGe-dopingdose.Weproposethatthe400—470nmPLbandoriginatesfrommultipleluminescencecenters,andthe730-and780-nmPLpeaksareascribedtotheSi=OandGeOluminescencecenters.

简介：AseriesofAlx-(Alq3)1-xgranularfilmsispreparedonSiwaferwithnativeoxidelayerusingco-evaporationtechnique.Largelateralphotovoltaiceffect(LPE)isobserved,withanoptimalLPVsensitivityof75mV/mminx=0.35sample.ThedependenceofLPEontemperatureandAlcompositionisinvestigated,andthepossiblemechanismisdiscussed.

简介：日本松下技术研究公司研制出把si超微粒子作为激活区的室温可见发光器件。在真空稀有气体中进行以单晶si为靶的脉冲激光沉积，在基板上以层状沉积气相生长的si超微粒子，然后进行热氧化，形成被表面氧化膜所覆盖的Si超微粒子聚合体。

简介：Siliconnanoconearrayswithmetalsilicide(FeandCr)-enrichedapexesarefabricatedonSi(100)substratebytheAr+ionbombardmentmethod.Thenanoconearraysshowexcellentfieldemissionproperties.Ahighcurrentdensity(J)of～0.33mA/cm2underafieldof～3V/μm,averylowturn-onfieldof～1.4V/μm,andaverylargeenhancementfactorof～9466arealsoobtained.TheemissionJofSinanoconearraysremainsextremelystableforlongperiodsoftime(24h).

简介：Hybridoctagonal-ringmicrolasersareinvestigatedforrealizingastableoutputfromasiliconwaveguidebasedonatwo-dimensionalsimulation.Theinnerradiusoftheringisoptimizedtoachievesingle-modeandlow-thresholdoperation.Usingthedivinylsiloxane-benzocyclobutene(DVS-BCB)bondingtechnique,ahybridAlGaInAs/Sioctagonal-ringmicrolaserverticallycoupledtoasiliconwaveguideisfabricatedwithasidelengthof21.6μmandaninnerradiusof15μm.Asingletransverse-modeoperationisachievedwithathresholdcurrentdensityof0.8kA∕cm~2andaside-modesuppressionratioabove30dB,andastableoutputfromthelowersiliconwaveguideisobtained.

简介：设计了一种阵列波导光栅解调集成系统中的8通道Si纳米线阵列波导光栅波分复用器。根据材料的折射率设计了单模波导截面尺寸,利用光束传播法对所设计阵列波导光栅进行了模拟。结果表明,器件尺寸为200μm×219μm,远小于目前技术较成熟的硅基SiO2的尺寸,光功率分布符合高斯分布,信道间隔为1.8nm,串扰小于-21dB。对小尺寸AWG的设计具有参考意义。

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