简介:TheMOCVDgrowthofmodifiedAlAs/GaAsdoublebarrierresonanttunnelingdiodes(DBRTD)withanA1GaAschairwasreported.Theresonancestothefirstexcitedstateswereobtained.Thepeak-to-valleycur-rentratio(PVCR)is1.3at77K,roomtemperaturepeakcurrentdensityis8kA/cm~2.Theresonancevoltagesareinagreementwiththetheoreticalapproachbytransfer-matrixmethod.Influenceofinterruptedgrowthtimeatthehetero-interfaceandincorporationoftheAlGaAschairtothedeviceperformanceswerestudiedandthemechanismwasdiscussed.TheattempttoaddanAlGaAschairtotheDBRTDbyMOCVDresultedinimprovementinthePVCRandpeakcurrentdensity.
简介:Bead-on-plateCO2laserweldingof1000MPagradetransformationinducedplasticity(TRIP)steelwasconductedunderdifferentweldingpowers,weldingspeedsandshieldgases.Themacrostructuralandmicrostructuralfeaturesoftheweldedjointwereinvestigated.Theincreaseofweldingspeedreducedthewidthoftheweldbeadandtheporositiesintheweldbeadresultingfromthedifferentflowmodeofmeltedmetalinweldpool.ThedecreaseofweldingpoweroruseofshieldgasofheliumalsocontributedtothereductionofporosityinBead-on-plateCO2laserweldingof1000MPagradetransformationinducedplasticity(TRIP)steelwasconductedunderdifferentweldingpowers,weldingspeedsandshieldgases.Themacrostructuralandmicrostructuralfeaturesoftheweldedjointwereinvestigated.Theincreaseofweldingspeedreducedthewidthoftheweldbeadandtheporositiesintheweldbeadresultingfromthedifferentflowmodeofmeltedmetalinweldpool.Thedecreaseofweldingpoweroruseofshieldgasofheliumalsocontributedtothereductionofporosityintheweldbeadduetothealleviationofinducedplasmaformation,thusstabilizingthekeyhole.TheporosityformationintimatelycorrelatedwiththeevaporationofalloyelementMninthebasemetal.Thelaserweldedmetalhadsamemartensitemicrostructureasthatofwater-quenchedbasemetal.Theweldingparameterswhichincreasedcoolingrateallledtofinemicrostructuresoftheweldbead.