简介：AdhesionimprovementofCVDdiamondfilimbyintroducinganelectro-depositedinterlayer;Agitation:themostversatiledegreeoffreedomforsurfacefinishers;Developmentofhydroxyapatitecoatingonporoustitaniumviaelectro-depositiontechnique;EffectofintensemagneticfieldonCdTeelectro-deposition;ElectrodepositionofMetallicLithiumonaTungstenElectrodein1-Butyl-l-methylpyrrolidiniumBis(tritluoromethanesulfone)imideRoom-temperatureMoltenSalt

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简介：[篇名]Bi-2212:AnHTSCoatedConductor,[篇名]Carbonnanotube-perovskite-compositesasnewelectrodematerial,[篇名]CeO{sub}2bufferlayerbypulsedlaserdepositionforYBCOcoatedconductor,[篇名]CeO{sub)2BufferLayersDepositedbyPulsedLaserDepositionforTFA-MODYBa{sub}2Cu{sub}3O{sub)(7-x)SuperconductingTape,[篇名]Characteristicofthin-filmNTCthermalSensors,[篇名]Characteristicsofcobalt-dopedzincoxidethinfilmspreparedbypulsedlaserdeposition,[篇名]CharacteristicsofTiO{sub}2ThinFilmasaPhotocatalystPrepardUsing-thePulsedLaserDepositionMethod.

简介：Co-dopingDepositionofp-typeZnOThinFilmsusingKrFExcimerLaserAblation;ComparisonofGrowthMorphologyinGe(001)HomoepitaxyUsingPulsedLaserDepositionandMBE;CompositionandstructureofBCNfilmspreparedbyionbeam-assistedpulsedlaserdeposition;Compositionofβ-FeSi{sub}2thin-filmsgrownbyapulsedlaserdepositionmethod

简介：SY509-3-202[篇名]Influenceofthetemperaturedistributiononchemicaldepositionininternalproblems；SY509-3-203[篇名]ManufacturingReliableUnlaededViasWithoutCVDBarrierLayers；……

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简介：[篇名]Electro-depositionoftantalumontumgstenandnickelinLiF-NaF-CaF{sub}2meltcontainingK{sub}2TaF{sub}7electrochemicalstudy,[篇名]Electro-EpitaxialBufferLaycrsforREBCOTspeArchitectures,[篇名]EQCMwithair-gapexcitationelectrode.Calibrationtestswithcopperandoxygencoatings,[篇名]FormationofWell-definedNanocolumnsbyIonTrackingLithography,[篇名]Fundamentalexperimentalstudyonfreefabricationofnanocrystallinecopperbulkbyselectiveelectrodepositionwithelectrolytejet,[篇名]Magneticnanowirearraysobtainedbyelectro-depositioninorderedaluminatemplates,[篇名]Morphologicalcharacteristicsofnickelparticleselectrodepositedfromchloridedominantsolution.

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简介：SY509-3-209[篇名]CrystallinePropertiesofFerroelectric-RelaxorPMN-PIThinFilmsbyPulsedLaserDeposition；SY509-3-210[篇名]CuprateBasedOxideSuperlatticesShowingSimultaneouslySuperconductingandFerromagneticProperties；……

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简介：AComputationalStudyofGasPhaseChemistryinCarbonNanotubeSynthessbyPECVD;AfieldpointbasedapproachforsensorconditioninginMO-CVDreactors;AMethodforReal-TimeControlofThinFilmCompositionUsingOESandXPS;Amechanism-basedmodelofchemicalvapordepositionofepitaxialSi{sub}(1-x)Ge{sub}xflirts

简介：SY509-3-196[篇名]Anovelstrainedsurface-channelpMOSFETSi{sub}0.7Ge{sub}0.3withanALDTiN/AI{sub}20{sub}3/HfAIO{sub}x/AI{sub}20{sub}3gatestack；SY509-3-197[篇名]Aquantitativestudyofthenano-scratchbehaviorofboronandcarbonnitridefilms；……

简介：[篇名]1.55-umsilicon-basedreflection-typewaveguide-integratedthermo-opticswitch,[篇名]120×90ElementThermoelectricInfraredFocalPlaneArraywithPreciselyPatternedAu-blackAbsorber,[篇名]4H-SiCEpitaxialGrowthfcrHigh-PowerDevices,[篇名]A90nmgenerationcopperdualdamascenetechnologywithALDTaNbarrier,[篇名]Acomparativemicrotribologicalinvestigationofdiamond-likecarbonfilmsforapplicationsinmicrosystems,[篇名]Acomparisonofmicrocrystailinesiliconpreparedbyplasma-enhancedchemicalvapordepositionandhot-wirechemicalvapordeposition:electronicanddeviceproperties.

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简介：中华人民共和国工业和信息化部中华人民共和国国家发展和改革委员会中华人民共和国科学技术部中华人民共和国财政部中华人民共和国环境保护部中华人民共和国商务部中华人民共和国海关总署国家质量监督检验检疫总局令第32号《电器电子产品有害物质限制使用管理办法》已经工业和信息化部部务会议审议通过,并经发展改革委、科技部、财政部、环境保护部、商务部、海关总署、质检总局同意,现予公布,自年7月1日起施行。