简介：Recently,bismuthsulfide(Bi2S3)hasattractedmuchattentioninthethermoelectriccommunityowingtoitsabundance,lowcost,andadvancedproperties.However,itspoorelectricaltransportpropertieshavepreventedBi2S3devicesfromrealizinghighthermoelectricperformance.Inthiswork,ourmotivationistodecreasethelargeelectricalresistivity,whichisrecognizedastheoriginofthelowZTvalueinundopedBi2S3.Wecombinedmeltingandsparkplasmasintering(SPS)inacontinuousfabricationprocesstoproduceBi2S3–xSex(x=0,0.09,0.15,0.21)andBi2S2.85–ySe0.15Cly(y=0.0015,0.0045,0.0075,0.015,0.03)samples.OurresultsshowthatSealloyingatSsitescannarrowthebandgapandactivateintrinsicelectronconduction,leadingtoahighpowerfactorof~2.0μW·cm–1·K–2atroomtemperatureinBi2S2.85S0.15,about100timeshigherthanthatofundopedBi2S3.Moreover,ourfurtherintroductionofClatomsintotheSsitesresultedinasecond-stageoptimizationofcarrierconcentrationandsimultaneouslyreducedthelatticethermalconductivity,whichcontributedtoahighZTvalueof~0.6at723KforBi2S2.835Se0.15Cl0.015.OurresultsindicatethathighthermoelectricperformancecouldberealizedinBi2S3withearth-abundantandlow-costelements.