810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures-中国期刊网

摘要 The810-nmInGaAlAs/AlGaAsdoublequantumwell(QW)semiconductorlaserswithasymmetricwaveg-uidestructures,grownbymolecularbeamepitaxy,showhighquantumefficiencyandhigh-powerconver-sionefficiencyatcontinuous-wave(CW)poweroutput.Thethresholdcurrentdensityandslopeefficiencyofthedeviceare180A/cm~2and1.3W/A,respectively.Theinternallossandtheinternalquantumefficiencyare1.7cm~(-1)and93%,respectively.The70%maximumpowerconversionefficiencyisachievedwithnarrowfar-fieldpatterns.

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810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures

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810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures

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