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Ion implantation of semi—insulating InP materials

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摘要 ThemethodsforprotectingInPsurfaceagainstdegradationduringannealing,includingencapsulantandencpsulant-freetechniques;rapidthermalan-nealingofInPimplantedlayers;implantedionspeciesandsomeprofilesoftypicaldopants,etc.,theyareallthekeytechniquesconcerningionimplantationintose-mi-insulatingInP,andhavebeenreviewedsyntheticallyaswell.

DOI pj0kow1w4y/1897951

作者 ZENGQinggao

机构地区不详

出处《半导体光子学与技术：英文版》 1995年1期

关键词离子注入退火表面处理半绝缘材料磷化铟半导体

分类 [电子电信][物理电子学]

出版日期 1995年01月11日（中国期刊网平台首次上网日期，不代表论文的发表时间）

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来源期刊

半导体光子学与技术：英文版

半导体光子学与技术：英文版

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相关关键词

离子注入退火表面处理半绝缘材料磷化铟半导体

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