Inthiswork,resultsonthestudyofthestructureandphotoluminescence(PL)propertiesofSiOxNythinfilmsarepresented.Thefilmsweredepositedatroomtemperatureusingadual-ion-beamco-sputteringsystem.TheXRDandTEMresultsshowthatthedepositedfilmshaveanamorphousstructure.IntheXPSresult,wefindN1sspectraconsistofonesymmetricsinglepeakat397.8eV,indicatingthatthenitrogenatomsaremainlybondedtosilicon.ItisinagreementtotheresultofFTIR.InSiOxNyfilms,anintensesinglePLpeakat590nmisobserved.Furthermore,withtheincreaseoftheNcontentintheSiOxNyfilms,theintensityofthePLpeakat590nmincreasesalot.ThePLpeakof590nmissuggestedtooriginatefromN-relateddefects.
