Study of strain in partially relaxed Ge epilayers on Si(100) substrate

相关推荐

• Strain Relaxation Related Photoluminescence Bands in Ge／Si Short Period Superlattices
• Study on Gd-Si-Ge Alloys Using Domestic Gd
• Study of strain and compostion of the self—organized GE dots by grazing incident X—ray diffraction
• Calculation of Ge0.5Si0.5-Si Superlattice Photodetectors on Ge0.05Si0.95 Waveguides:The Optimum Parameters^①
• Residual Strain and Electronic Characteristics of Si-doped GaN

同分类资源 更多

• [核技术及应用] 标淮参考物均匀性的SRXRF研究
• [核技术及应用] 利用SAXS表征聚合氯化铝硅絮凝剂
• [核技术及应用] 全新深亚微米X射线T型栅工艺
• [核技术及应用] 江西洪州窑古瓷的元素谱及产地特征的SRXRF研究
• [核技术及应用] Numerical Research on Plasma Generation and Expansion into Vacuum

相关关键词