Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection

(整期优先)网络出版时间:1999-01-11
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WereportonastudyofinterfacialstructureofGaNfilmsgrownonGaAs(001)substratesbyplasma-assistedmolecularbeamepitaxyusingx-raygrazing-anglespecularreflection.WeshowthatinterfaciallayerswithelectrondensitiesdifferingfromthoseofGaNandGaAswereformedupondepositionofGaN.Itisalsofoundthattheinterfacialstructureofoursystemsdependsstronglyonthecourseoftheinitiallayerdeposition.ThephasepurityoftheGaNfilmswasexaminedbyx-rayreciprocalspacemapping.Asimplekineticgrowthmodelsuggestedbyourresultshasbeenpresented.