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2018年3期
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Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes
Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes
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摘要
未填写
DOI
54yw7rq3j0/1842476
作者
Muhammad Usman;Kiran Saba;Adnan Jahangir;Muhammad Kamran;Nazeer Muhammad
机构地区
不详
出处
《固体力学学报:英文版》
2018年3期
关键词
二极管
陷阱
机电
试验性
数字地
极化
分类
[理学][固体力学]
出版日期
2018年03月13日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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来源期刊
固体力学学报:英文版
2018年3期
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相关关键词
二极管
陷阱
机电
试验性
数字地
极化
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