简介:霍尔电场和网充电的产生与联系了磁性重新连接离子在血浆密度和磁场的不同起始的条件下面被学习。与大厅效果的包括,电子和离子运动的去耦沿着separatrix与强壮的电场和大网充电密度导致狭窄的层的形成。越过当前的表的血浆密度或磁场或两个的不对称现象将大部分增加电场和网充电的大小。结果显示磁场的不对称现象在生产更大的电场和费用密度是更有效的。电场和网费用比在高密度或/并且低磁场方面的那些在低密度或/并且高磁场方面总是是大得多的。电场和网费用密度线性地依赖于血浆密度的比率或越过当前的表的磁场的平方。为有磁场和密度的两起始的不对称现象的盒子,大霍尔电场和费用密度被产生。
简介:ToovercomethelimitationoflowimagesignalswingrangeandlongresettimeinfourtransistorCMOSactivepixelimagesensor,achargepumpcircuitispresentedtoimprovethepixelresetperformance.Thechargepumpcircuitconsistsoftwostageswitchcapacitorserialvoltagedoubler.Cross-coupledMOSFETswitchstructurewithwellcloseandopenperformanceisusedinthesecondstageofthechargepump.Thepixelresettransistorwithgatevoltagedrivenbyoutputofthepumpworksinlinearregion,whichcanaccelerateresetprocessandcompleteresetisachieved.Thesimulationresultsshowthatoutputofthechargepumpisenhancedfrom1.2to4.2Vwithvoltageripplelowerthan6mV.Thepixelresettimeisreducedto1.14nsindark.Imagesmearduetonon-completelyresetiseliminatedandtheimagesignalswingrangeisenlarged.ThechargepumpissuccessfullyembeddedinaCMOSimagesensorchipwith0.3×106pixels.
简介:Planechargeexplosiontechnique(PCET)isoneofthemajortechniquesfrequentlyusedinlarge-scaleblast-resistantstructuretests.AnFEMmodelwasestablished,whichcansimulatetheprocessofairreleasingfromtheblastcavity.Theeffectsofthechargedensity,theintervalofthechargestrip,thedistanceofthechargesfromthestructure,andthemassofbackfillsoilontheoverpressuresappliedonthetestedstructureswereanalyzedbytheFEMmodel.Thequantitativerelationshipsbetweenthepeakvalueandthedurationoftheoverpressureandtheabove-mentionedaffectingparameterswereestablished.Agreementbetweennumericalresultsandthetestdatawasobtained.
简介:Thenonradiativecharge-transfercrosssectionsforprotonscollidingwithRb(5s)atomsarecalculatedbyusingthequantum-mechanicalmolecularorbitalclose-couplingmethodinanenergyrangeof103keV-10keV.Thetotalandstate-selectivecharge-transfercrosssectionsareingoodagreementwiththeexperimentaldataintherelativelylowenergyregion.Theimportanceofrotationalcouplingforchargetransferprocessisstressed.Comparedwiththeradiativecharge-transferprocess,nonradiativechargetransferisadominantmechanismatenergiesabove15eV.Theresonancestructuresofstate-selectivecharge-transfercrosssectionsarisingfromthecompetitionamongchannelsareanalysedindetail.Theradiativeandnonradiativecharge-transferratecoefficientsfromlowtohightemperaturearepresented.
简介:Nuclearbindingenergies,chargeradiiandthechargedistributionsofeven-eventin(Sn)isotopesarecalculatedusingrelativisticmeanfieldtheory,andthetheoreticalresultsarefoundtobeinaccordancewiththeexperimentaldata.ThenuclearchargeformfactorsforSnisotopesarecalculatedusingthephase-shiftanalysismethod.ItisshownthattheminimaofthechargeformfactorsshiftupwardandinwardwithanincreaseintheneutronnumberoftheSnisotopes.
简介:Asurfacechargemeasuringsystemusingthecapacitiveprobemethodisanalysed.Thepresentstudyshowsthatthemeasuringsystemcannothaveasteady-stateoutputandthattheerrorresultingfromthefiniteleakageresistanceofthemeasuringsystemwillbeaccumulatedduringthemeasuringprocess.Basedonthetheoreticalanalysisanewtypeprobewithalowchargeleakageandhighresolutionisdesigned.ThesurfacechargeaccumulatedontheTefloninsulatorunderaDCvoltageismeasuredusingthisnewprobeandsomephenomenaofthesurfacechargingarereported.
简介:为了开发一个双人脚踏车弹头,那能有效地破坏具体目标,这篇论文借助于实验与不同的锥角度和班机材料探索塑造的费用的穿入表演进具体目标。穿入过程和由塑造的费用和动能射弹的具体目标的破坏机制被分析并且比较。试验性的结果建议运动精力充沛的射弹和塑造的充电能够破坏损坏的具体目标,而是大小是不同的。与动能射弹相比,塑造的费用有穿入的更多的重要效果进目标,并且引起很大的spalling区域。因此,塑造的费用对双人脚踏车弹头的第一阶段的充电相当合适。当洞直径变得更大时,随塑造的费用班机锥角度的增加,穿入的深度逐渐地减少,这也被发现。有铜班机的穿入深度比铝班机大,但是洞直径相对更小,并且有钢班机的塑造的起诉在上述二诉讼之间。有100°的一个锥角度的塑造的费用能形成喷气射弹费用(JPC)。与JPC,有具体目标上的最佳深度和直径的一个洞能被形成,它保证秒阶段弹头顺利渗透进洞并且在最佳深度爆炸在具体目标完成破坏的需要的水平。
简介:StateofCharge(SOC)isusedtoadjusttheinitializationSOCvaluesoastomakeelectricvehiclesimulationresultsclosetorealvehicleperformance.ThispaperfirstlyanalysesthebatterySOCcorrectalgorithm,thenusesADVISORwhichisaelectricvehiclesimulationsoftwaretosimulateahybridelectriccarwiththreedifferentcasesofnoSOCcorrect,linearSOCcorrectandzerodeltaSOCcorrect,aswellasmakesthecompareandanalysisforthosesimulationresults.Intheend,anoverallconclusiontoSOCcorrectalgorithmisgiven.
简介:Weevaluatetheinfluenceofthethermallyassistedtunneling(TAT)mechanismonchargetrappingmemory(CTM)cellperformancebynumericalsimulation,andcomprehensivelyanalysetheeffectsofthetemperature,trapdepth,distributionoftrappedcharge,gatevoltageandparametersofTATonerasing/programmingspeedandretentionperformance.TATisanindispensablemechanisminCTMthatcanincreasethedetrappingprobabilityoftrappedcharge.OurresultsrevealthattheTATeffectcausesthesensitivityofcellperformancetotemperatureanditcouldaffecttheoperationalspeed,especiallyfortheerasingoperation.TheresultsshowthattheretentionperformancedegradescomparedwithwhentheTATmechanismisignored.
简介:Theper-unit-lengthcapacitanceparameterofmulticonductortransmissionline(MTL)iscommonlyextractedwithindirectmatrixtransformmethod,whichiscomplexandtime-consuming.Tosolvetheproblem,animprovedmethodtodirectlycomputetheMTLcapacitanceisproposed,whichcanbeappliedinthetransmissionlinestructurewitharbitraryshapedcross-sectionandarbitraryseparatedistance.Thismethodimportsvoltageconversionsandmatrixoperationstosimplifythecomplexity,improvescomputationalefficiencybyabout600%withresultsasaccurateaspreviousmethod.ThenovelmethodpresentsaclearchargedistributionmapofMTL,whereaspreciousmethodwillexperienceatortuousprocesstogetchargedistribution.